f dg 6301 n features * the pinouts are symmetrical; pin 1 and 4 are interchangeable. units inside the carrier can be of either orientation and will not affect the functionality of the device. absolute maximum ratings t a = 25c unless otherwise noted symbol parameter f dg 6301 n units v dss drain-source voltage 25 v v gss gate-source voltage 8 v i d drain/output current - continuous 0.22 a - pulsed 0.65 p d maximum power dissipation (note 1 ) 0.3 w t j ,t stg operating and storage temperature range -55 to 150 c esd electrostatic discharge rating mil-std-883d human body model (100 pf / 1500 w ) 6 .0 kv thermal characteristics r q ja thermal resistance, junction-to-ambient 415 c/w 25 v, 0.22 a continuous, 0.65 a peak. r ds(on) = 4 w @ v gs = 4.5 v, r ds(on) = 5 w @ v gs = 2.7 v. very low level gate drive requirements allowing direct operation in 3 v circuits (v gs(th) < 1.5 v). gate-source zener for esd ruggedness (>6 kv human body model). compact industry standard sc70-6 surface mount package. sot-23 supersot t m -8 so-8 sot-223 sc70-6 supersot t m -6 1 or 4 * 6 or 3 5 or 2 4 or 1 * 2 or 5 3 or 6 sc70-6 g1 d2 s1 d1 s2 g2 .01 smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 25 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 25 mv / o c i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v 1 a t j = 5 5c 10 a i gss gate - body leakage current v gs = 8 v, v ds = 0 v 100 na on characteristics (note 2) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 0.65 0.85 1.5 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -2.1 mv / o c r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 0.22 a 2.6 4 w t j =12 5c 5.3 7 v gs = 2.7 v, i d = 0.19 a 3.7 5 i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v 0.22 a g fs forward transconductance v ds = 5 v, i d = 0.22 a 0.2 s dynamic characteristics c iss input capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 9.5 pf c oss output capacitance 6 pf c rss reverse transfer capacitance 1.3 pf switching ch aracteristics (note 2 ) t d(on ) turn - on delay time v dd = 5 v, i d = 0.5 a, v gs = 4.5 v, r gen = 50 w 5 10 ns t r turn - on rise time 4.5 10 ns t d(off) turn - off delay time 4 8 ns t f turn - off fall time 3.2 7 ns q g total gate charge v ds = 5 v, i d = 0.22 a, v gs = 4.5 v 0.29 0.4 nc q gs gate-source charge 0.12 nc q gd gate-drain charge 0.03 nc drain-source diode characteristics and maximum ratings i s maximum continuous source current 0.25 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.25 a (note 2 ) 0.8 1.2 v notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. r q ja = 415 o c/w on minimum pad mounting on fr-4 board in still air. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. f dg 6301 n smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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